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DG211B/212B
Vishay Siliconix
Improved Quad CMOS Analog Switches
FEATURES
D D D D D D D D "22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance--rDS(on): 50 W Low Leakage--ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching--tON: 120 ns Low Charge Injection--Q: 1 pC
BENEFITS
D D D D D D D Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG211/212 Space Savings (TSSOP)
APPLICATIONS
D D D D D D D Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits
DESCRIPTION
The DG211B/212B analog switches are highly improved versions of the industry-standard DG211/212. These devices are fabricated in Vishay Siliconix' proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. up to "22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle
The DG211B is a normally closed switch and the DG212B is a normally open switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG211B
Dual-In-Line, SOIC and TSSOP
IN1 D1 S1 V- GND S4 D4 IN4
1 2 3 4 5 6 7 8 Top View
16 15 14 13 12 11 10 9
IN2 D2 S2 V+ VL S3 D3 IN3 Logic "0" v 0.8 V Logic "1" w 2.4 V
TRUTH TABLE
Logic
0 1
DG211B
ON OFF
DG212B
OFF ON
Document Number: 70040 S-00788--Rev. H, 24-Apr-00
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DG211B/212B
Vishay Siliconix
ORDERING INFORMATION
Temp Range Package
16-Pin Plastic DIP DG212BDJ DG211BDY -40 to 85 C 40 85_C 16-Pin Narrow SOIC DG212BDY DG211BDQ 16-Pin TSSOP DG212BDQ
Part Number
DG211BDJ
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ SX VL Level Shift/ Drive INX V- V+ DX GND V-
FIGURE 1.
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Document Number: 70040 S-00788--Rev. H, 24-Apr-00
DG211B/212B
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = "14 V VD = "10 V, IS = 1 mA , Full Room Full Room Room Full Room Full Room Full -0.5 -5 -0.5 -5 -0.5 -10 -15 45 2 "0.01 "0.01 "0.02 0.5 5 0.5 5 0.5 10 nA A 15 V
D Suffix
-40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minb
Typc
Maxb
Unit
100
85
W
Digital Control
Input Voltage High Input Voltage Low Input Current Input Capacitance VINH VINL IINH or IINL CIN VINH or VINL Full Full Full Room -1 5 2.4 V 0.8 1 mA pF
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk tON tOFF Q CS(off) CD(off) CD(on) OIRR XTALK VS =10 V See Figure 2 S Fi CL = 1000 pF, Vg= 0 V, Rg = 0 W VS = 0 V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 p , RL = 50 W pF, VS = 1 VRMS, f = 100 kH kHz Room Room Room Room Room Room Room Room 1 5 5 16 90 dB 95 pF F 300 ns 200 pC
Power Supply
Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- IL VOP Room Full Room Full Room Full Full "4.5 -10 -50 10 50 "22 V 10 50 mA A
Document Number: 70040 S-00788--Rev. H, 24-Apr-00
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DG211B/212B
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance VANALOG rDS(on) VD = 3 V, 8 V, IS = 1 mA Full Room Full 0 90 12 160 200 V W
D Suffix
-40 to 85_C
Symbol
V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minb
Typc
Maxb
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q VS = 8 V See Figure 2 S Fi CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room Room Room 4 300 ns 200 pC
Power Supply
Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- IL VOP Room Full Room Full Room Full Full )4.5 -10 -50 10 50 )25 V 10 50 mA A
Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
110 r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "20 V "10 V "15 V "5 V r DS(on) Drain-Source On-Resistance ( W ) - 100 90 80 70 60 50 40 30 20 10 0 -15 125_C 85_C 25_C -55_C V+ = 15 V V- = -15 V
rDS(on) vs. VD and Temperature
-10
-5
0
5
10
15
VD - Drain Voltage (V)
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Document Number: 70040 S-00788--Rev. H, 24-Apr-00
DG211B/212B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Single Power Supply Voltages
250 r DS(on) Drain-Source On-Resistance ( W ) - 225 200 20 I S,I D - Current (pA) 175 150 125 10 V 100 75 50 25 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) -30 -40 -20 12 V 15 V 7V 10 0 -10 -20 IS(off), ID(off) V+ = 5 V 40 30 V+ = 22 V V- = -22 V TA = 25_C ID(on)
Leakage Currents vs. Analog Voltage
-15
-10
-5
0
5
10
15
20
VANALOG - Analog Voltage (V)
Leakage Current vs. Temperature
1 nA V+ = 15 V V- = -15 V VS, VD = "14 V 30
QS, QD - Charge Injection vs. Analog Voltage
20
I S,I D - Current
Q - Charge (pC)
100 pA
10 V+ = 15 V V- = -15 V V+ = 12 V V- = 0 V -10
0
IS(off), ID(off) 10 pA
-20
1 pA -55
-35
-15
5
25
45
65
85
105 125
-30 -15
-10
-5
0
5
10
15
Temperature (_C)
VANALOG - Analog Voltage (V)
Off Isolation vs. Frequency
120 110 100 90 OIRR (dB) RL = 50 W 80 70 60 50 40 10 k 100 k 1M 10 M V+ = +15 V V- = -15 V
f - Frequency (Hz)
Document Number: 70040 S-00788--Rev. H, 24-Apr-00
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4-5
DG211B/212B
Vishay Siliconix
TEST CIRCUITS
+15 V
V+ VS = +2 V S IN 3V GND V- RL 1 kW CL 35 pF D VO
Logic Input
3V 50% 0V tOFF 90% tr <20 ns tf <20 ns
Switch Output -15 V VO = VS RL RL + rDS(on)
VO tON
FIGURE 2. Switching Time
C +15 V C VS
V+
+15 V
V+ S1 Rg = 50 W IN1 0V, 2.4 V IN GND V- C RL NC 0V, 2.4 V C = RF bypass XTALK Isolation = 20 log VS VO -15 V S2 D2 VO RL GND -15 V VS VO V- C D1 50 W
VS Rg = 50 W 0V, 2.4 V
S
D
VO
IN2
Off Isolation = 20 log
FIGURE 3. Off Isolation
FIGURE 4. Channel-to-Channel Crosstalk
+15 V V+ S IN 3V GND V- D VO CL 1000 pF INX ON VO
DVO
Rg
Vg
OFF
ON
DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO -15 V
FIGURE 5. Charge Injection
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4-6
DG211B/212B
Vishay Siliconix
APPLICATIONS
+5V VL V+ +15 V
Logic Input Low = Sample High = Hold 1 kW +15 V -15 V - LM101A VIN + 2N4400 5 MW 5.1 MW V- 30 pF -15 V Aquisition Time = 25 ms Aperature Time = 1 ms Sample to Hold Offset = 5 mV Droop Rate = 5 mV/s -15 V 50 pF 200 W 1000 pF J500 J507 VOUT J202 +15 V
DG211B
FIGURE 6. Sample-and-Hold
+15 V 160 C4 fC4 Select fC3 Select TTL Control fC2 Select fC1 Select 150 pF C3 Voltage Gain - dB 1500 pF C2 0.015 mF C1 0.15 mF 80 fC1 40 fC2 fC3 fC4 V1 120
0 V-
fL1
fL2
fL3
fL4
DG211B
GND -40 1 10 100 1k 10 k 100 k 1M
-15 V R3 = 1 MW +15 V - R1 = 10 kW LM101A + R2 = 10 kW 30 pF -15 V VOUT
Frequency - Hz
AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX fL (Unity Gain Frequency) = Max Attenuation = rDS(on) 10 kW 1 2pR1CX [ -47 dB
R3 R1
= 100 (40 dB)
FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency
Document Number: 70040 S-00788--Rev. H, 24-Apr-00
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4-7
DG211B/212B
Vishay Siliconix
APPLICATIONS
+5 V
+15 V
30 pF
VIN1
VL
V+
+15 V + LM101A
VIN2
-
DG419
-15 V CH GND V-
+15 V
RF1 18 kW
RF2 9.9 kW
RF3 100 kW
DG212B
-15 V Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V- Logic High = Switch On -15 V FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains GND RG1 2 kW RG2 100 W RG3 100 W
Gain =
RF + RG RG
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Document Number: 70040 S-00788--Rev. H, 24-Apr-00

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